Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
نویسندگان
چکیده
منابع مشابه
Electrical and optical characterization of surface passivation in GaAs nanowires.
We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed o...
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1 Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA 2 Department of Physics, University of Southern California, Los Angeles, CA 90089, USA 3 Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA † Center for Energy Nanoscience, University of Southern California, Los Angeles, CA 90...
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ژورنال
عنوان ژورنال: Nano Express
سال: 2020
ISSN: 2632-959X
DOI: 10.1088/2632-959x/aba7f1